Comprehensive characterization and optoelectronic significance of Ho3+ and Cr3+ Co-doped ZnAl2O4 spinels.

The spinels ZnAl1.99-xHoxCr0.01O4 (with x = 0 and 0.001) were synthesized using a solid-state method, and various techniques were employed for their characterization. X-ray diffraction (XRD) analysis confirmed a cubic spinel structure with the Fd3̄m space group for both spinels. The morphology and homogeneity of the chemical composition were determined using scanning electron microscopy (SEM) and energy dispersive X-ray analysis. Raman and infrared vibrational spectroscopy techniques were also employed for analysis. The optical band gap (Eg) was determined from UV/vis absorption spectra, and the direct transition behavior was confirmed by Tauc's law. The observed large disorder and defect concentration are attributed to the presence of Cr3+ and Ho3+ ions, explaining this behavior. The electron paramagnetic resonance (EPR) measurement presented different types of traps. Room temperature absorption spectra exhibited multiple peaks corresponding to the 3d-3d and 4f-4f transitions of Cr3+ and Ho3+ ions. The results obtained validate the significance of our compounds in optoelectronic device applications.

Optical characterization and defect-induced behavior in ZnAl1.999Ho0.001O4 spinel: Unraveling novel insights into structure, morphology, and spectroscopic features.

The ZnAl1.999Ho0.001O4 phosphor, prepared by the solid-state method, crystallizes in the cubic spinel structure. Morphology and chemical composition homogeneity were determined via Energy Dispersive X-ray and SEM analysis. The (Eg) optical band gap was evaluated from the UV/vis absorption spectrum, confirming direct transition behavior according to Tauc's law. The Urbach energy (Eu) in the ZnAl1.999Ho0.001O4 spinel was higher than that in the ZnAl2O4 spinel, indicating increased disorder and a higher concentration of defects due to Ho3+ ions. The penetration depth (δ(λ)), optical extinction (k(λ)), and refractive index (n(λ)) were assessed across wavelengths (λ). The room temperature absorption spectrum revealed several peaks corresponding to the 4f-4f transitions of Ho3+ ions.

A far-red-emitting ZnAl1.95Cr0.05O4 phosphor for plant growth LED applications.

ZnAl2-xCrxO4 (x = 0 and 0.05) samples were synthesized via a high-temperature solid-state reaction method. The structure, photoluminescence properties, EPR measurements, thermal stability, and chromaticity diagram of the far-red phosphor ZnAl1.95Cr0.05O4 were investigated. These measurements have enabled us to study the Cr3+ transitions and the site symmetry of Cr3+ in the ZnAl2O4 host lattice and examine the suitability of ZnAl1.95Cr0.05O4 for plant growth application. According to optical and EPR measurements, Cr3+ ions substitute Al3+ ions with D3d symmetry in the ZnAl2O4 host. PLE measurement indicates that upon excitation at 390 nm and 530 nm, the far-red phosphor ZnAl1.95Cr0.05O4 exhibited bright far-red emission around 687 nm. Photoluminescence phenomena show a sharp R line origin from the sublevels of the 2Eg(2G) → 4A2(4F) transition in Cr3+ ions. The 2Eg level was split into 2Eg (Eg) and 2Eg (2Ag) levels in the distorted crystal field environment, and the sharp R line in the ZnAl2O4 matrix was split into R1 and R2 lines. In this paper, the temperature-dependent luminescence characteristics of ZnAl1.95Cr0.05O4 have been investigated. As the temperature increased from 300 K to 440 K, a slight decrease in the intensity of the R1 and R2 lines was observed under excitation at 390 nm. The experimental results show that the ZnAl1.95Cr0.05O4 phosphors exhibit a nearly zero-thermal-quenching behavior. The CIE chromaticity coordinates of the ZnAl1.95Cr0.05O4 phosphor were located at the boundary of the chromaticity diagram, signifying that the phosphors possessed high color purity. The emissions of the ZnAl1.95Cr0.05O4 phosphor match well with the PFR absorption of phytochromes in plants. The investigation indicates that ZnAl1.95Cr0.05O4 is a potential far-red phosphor matching ultraviolet (UV) LED chips for plant growth applications.

Summerfield scaling model and electrical conductivity study for understanding transport mechanisms of a Cr3+ substituted ZnAl2O4 ceramic.

Solid-state and sol-gel procedures were used to prepare ZnAl1.95Cr0.05O4 nanocrystal spinels. From the results obtained by X-ray diffraction (XRD) and transmission electron microscopy (TEM), it can be concluded that the samples prepared by sol-gel synthesis are better crystallized than the ones resulting from the solid-state method. Studies by spectroscopy of impedance were done in function of frequency (40-107 Hz) and temperature (540-680 K) in the sample prepared by sol-gel synthesis. The electrical conductivity spectra obey Jonscher's law and two models were observed studying the variation of the exponent 's' as a function of temperature, Correlated Barrier Hopping (CBH) and Non-overlapping Small Polaron Tunnelling (NSPT). The predominant conduction mechanism is bipolaron hopping. The scaling behavior of conductivity spectra was checked by Summerfield scaling laws. The time-temperature superposition principle (TTSP) points to a common transport mechanism working for the low and middle frequency ranges. The scaling mechanism fails in the high-frequency ranges suggesting that conduction dynamics, and the usual hopping distance of mobile species, have changed. The values obtained for the activation energy from the hopping frequency, conductivity σ dc, bulk resistance R gb, and relaxation (f max), in the temperature range of 540-680 K, are very close. A higher and negative temperature coefficient of resistivity (TCR coefficient) equal to -2.7% K-1 is found at 560 K. This result shows that our compound is suitable for uncooled infrared bolometric applications and infrared detectors.